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mil-prf-19500/426d 28 december 2001 superseding mil-prf-19500/426c 2 november 2000 performance specification semiconductor device, transistor, pnp, silicon, amplifier type 2n4957 and 2n4957ub jan, jantx, jantxv, and jans this specification is approved for use by all departments and agencies of the department of defense. 1. scope 1.1 scope . this specification covers the performance requirements for pnp silicon, vhf-uhf amplifier transistors. four levels of produc t assurance are provided for each devic e type as specified in mil-prf-19500. 1.2 physical dimensions . see figure 1 (t0-72) and figure 2 (surface mount). 1.3 maximum ratings . p t (1) t a = +25 c v ceo v cbo i c v ebo t stg and t j mw v dc v dc ma dc v dc c 200 30 30 30 3.0 -65 to +200 (1) derate at 1.14 mw/ c above t a > +25 c. * 1.4 primary electrical charac teristics (common to all types) . limits hfe3 |h fe | r b 'c c r b 'c c c cb g pe nf v ce = 10 v dc i c = 5.0 ma dc i e = 2.0 ma dc v ce = 10 v dc f = 100 mhz i e = 2.0 ma dc f = 63.6 mhz v cb = 10 v dc (2n4957 only) i e = 2.0 ma dc f = 63.6 mhz v cb = 10 v dc (2n4957ub only) v cb = 10 v dc i e = 0 100 khz f 1 mhz i c = 2.0 ma dc f = 450 mhz v ce = 10 v dc i c = 2.0 ma dc v ce = 10 v dc f = 450 mhz ps ps pf db db min 30 12 1.0 1.0 17 max 165 36 8.0 16.0 0.8 25 3.5 beneficial comments (recommendations, additions, deletions ) and any pertinent data which may be of use in improving this document should be addressed to: defens e supply center columbus, attn: dscc-vac, p. o. box 3990 east broad street, columbus, oh 43216-5000, by using the standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. amsc n/a fsc 5961 distribution statement a . approved for public release; distribution is unlimited. inch-pound the documentation and process conversion measures necessary to comply with this revision shall be completed by 28 march 2002.
mil-prf-19500/426d 2 * figure 1. physical dim ensions of transistor type 2n4957 .
mil-prf-19500/426d 3 symbol dimensions notes inches millimeters min max min max cd 0.178 0.195 4.52 4.95 5 ch 0.170 0.210 4.32 5.33 hd 0.209 0.230 5.31 5.84 5 lc .100 tp 2.54 tp ld 0.016 0.021 0.406 0.533 7,8 ll 0.500 0.750 12.70 19.05 7,8 lu 0.016 0.019 0.41 0.48 7,8 l1 0.050 1 .27 8 l2 0.250 6.35 8 p 0.100 2.54 q 0.050 1.27 5 r .007 0.18 tl 0.028 0.048 0.71 1.22 tw 0.036 0.046 0.91 1.17 45 t. p. 45 t. p. notes: 1. dimension are in inches. 2. metric equivalents are given for general information only. 3. beyond r (radius) maximum, th shall be held for a minimum length of .011 (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. leads at gauge plane .054 +.001 -.000 inch (1.37 +0. 03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximu m material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 7. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all four leads. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with ansi y14.5m, diameters are equivalent to x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). * figure 1. physical dim ensions of transistor type 2n4957 continued.
mil-prf-19500/426d 4 dimensions symbol inches millimeters note min max min max a .046 .056 0.97 1.42 a1 .017 .035 0.43 0.89 b1 .016 .024 0.41 0.61 b2 .016 .024 0.41 0.61 b3 .016 .024 0.41 0.61 d .085 .108 2.41 2.74 d1 .071 .079 1.81 2.01 d2 .035 .039 0.89 0.99 d3 .085 .108 2.41 2.74 e .115 .128 2.82 3.25 e3 .128 3.25 l1 .022 .038 0.56 0.96 l2 .022 .038 0.56 0.96 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. figure 2. physical dimensions , surface mount (2n4957ub version) .
mil-prf-19500/426d 5 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard department of defense mil-std-750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.2 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. 3.4 interface and physical dimensions . the interface and physical dimens ions shall be as specified in mil-prf-19500, and figure 1 (t0-72 ) and 2 (ub, surface mount). 3.4.1 lead finish . unless otherwise specified, lead finish sha ll be solderable in accordance with mil-std-750, mil-prf-19500, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). * 3.5 marking . devices shall be marked in accordance with mil-prf-19500, except for the ub suffix package. marking on the ub package shall consist of an abbrevia ted part number, the date code, and the manufacturer's symbol or logo. the prefixes jan, jantx, jantxv, and jans can be abbreviated as j, jx, jv, and js respectively. the "2n" prefix and the "ub" suffix can also be omitted.
mil-prf-19500/426d 6 3.6 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. 3.7 electrical test requirements . the electrical test requirements sha ll be the subgroups specified in table i, group a herein. 3.8 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in a ccordance with mil-prf-19500 and as specified herein. * 4.3 screening (jantx, jantxv and jans levels only) . screening shall be in accordance with table iv of mil-prf-19500 and as specified herein. the following m easurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. screen (see table iv of mil-prf-19500) measurement jans level jantx and jantxv levels 3c thermal impedance, method 3131 of mil-std-750 thermal impedance, method 3131 of mil-std-750 7 hermetic seal (optional) (1) 9 i cbo1 , h fe3 not applicable 10 24 hours minimum 24 hours minimum 11 i cbo1 ; h fe3 ; ? i cbo1 = 100 percent of initial value or10 na dc, whichever is greater. ? h fe3 = 20 percent i cbo1 ,h fe3 12 see 4.3.1, 240 hours minimum see 4.3.1, 80 hours minimum 13 subgroups 2 and 3 of table i herein; ? i cbo1 = 100 percent of initial value or 10 na dc, whichever is greater; ? h fe3 = 20 percent subgroup 2 of table i herein; ? i cbo1 = 100 percent of initial value or 10 na dc, whichever is greater; ? h fe3 = 20 percent (1) hermetic seal test shall be per formed in either screen 7 or screen 14.
mil-prf-19500/426d 7 4.3.1 power burn-in . power burn-in conditions are as follows: t a = room ambient as defined in the general requirements of 4.5 of mil-std-750, v cb = 10 - 20 v dc. a power dissipation p d = 100 percent of p t maximum as defined in 1.3 shall be used. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. if alternate screening is being perform ed in accordance with appendix e, "alternate procedure for screening of jantx and jantxv types", of mil-prf-19500, a sample of screened devices shall be submitted to and pass the requirements of group a1 and a2 inspection onl y (table vib, group b, subgroup 1 is not required to be performed again if group b has already been sa tisfied in accordance with 4.4.2). 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil-prf-19500, and table i herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table via (jans) of mil-prf-19500 and 4.4.2.1 herein. (see 4.4.2.2 for jan, jantx, and jantxv group b testing.) electrical meas urements (end-points) and delta requirements shall be in accordance with table ii herein as spec ified in the footnotes for table ii. * 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition b4 1037 v cb = 10 v dc. b5 1027 v cb = 10 - 20 v dc minimum p d = maximum rated p t (see 1.3), t j = +150 c minimum, t = 1000 hours minimum. 4.4.2.2 group b inspection, (jan, jantx, and jantxv) . separate samples may be used for each step. for rules on resubmission for failed steps, see mil- prf-19500 rules on resubmission of failed subgroups. step method condition 1. 1039 steady-state life: test condition b, 340 hours, v cb = 10 - 20 v dc. n = 45 devices, c = 0. maximum rated power as defined in 1.3 shall be applied to the device to achieve a t j = 150 c minimum. 2. 1039 steady-state life test of step 1 shall be extended to 1,000 hours for each die design. samples shall be selected from a wafer lot every twelve months of wafer production. group b step 2 shall not be required more than once for any single wafer lot. n = 45 devices, c = 0 3. 1032 high-temperatur e life (non-operating), t a = +200 c n = 22, c = 0 4.4.2.3 group b sample selection . samples selected from group b inspection shall meet all of the following requirements: a. for jan, jantx and jantxv samples shall be sele cted randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. fo r jans, samples shall be selected from each inspection lot. see mil-prf-19500. b. must be chosen from an inspection lot that has been submitted to and passed group a, subgroup 2 conformance inspection. when the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups b4 and b5 for jans, and group b for jan, jantx and jantxv) may be pulled prior to the application of final lead finish.
mil-prf-19500/426d 8 4.4.3 group c inspection, jans . group c inspection shall be conducted in accordance with the tests and conditions specified for subgroup testing in table vii of mil-prf-19500, and 4.4. 3.1 herein (jans). see 4.4.3.2 for jan, jantx, and jantxv group c testing. electrical measurements (end point s) and delta requirements shall be in accordance with the steps of table ii herein and as specified in the notes for table ii. 4.4.3.1 group c inspection, table vii (jans) of mil-prf-19500. subgroup method condition c2 2036 test condition e; not applicable for ub devices. c6 1026 v cb = 10 - 20 v dc; p t = maximum rated power as defined in 1.3. adjust t a to achieve t j = +150 c minimum. 4.4.3.2 group c inspection, jan, jantx, and jantxv . group c inspection (jan, jantx, and jantxv), see table vii of mil-prf-19500. subgroup method condition c2 2036 condition e; not applicable to ub devices. c6 not applicable. 4.4.3.3 group c sample selection . samples for subgroups in group c shall be chosen at random from any inspection lot containing the intended package type and lead fi nish procured to the same specification which is submitted to and passes group a tests for conformance inspec tion. when the final lead finish is solder or any plating prone to oxidation at high temper ature, the samples for c6 life test may be pulled prior to the application of final lead finish. testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. * 4.4.4 group e inspection . group e inspection shall be performed in accordance with table iii herein for qualification or re-qualification only. in case qualificati on was awarded to a prior revision of the specification sheet that did not request the performance of table iii tests, t he tests specified in table iii herein must be performed to maintain qualification. 4.5 methods of inspection . methods of inspection shall be as specif ied in the appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurement shall be as specified in section 4 of mil-std-750. 4.5.2 collector -base time constant . this parameter may be determined by applying an rf signal voltage of 1 volt (rms) across the collector-base terminal s, and measuring the ac voltage drop (v eb ) with a high impedance rf voltmeter across the emitter-base terminals. with f = 63. 6 mhz used for the 1 volt signal, the following computation applies: c c (ps) = 2 x v eb (millivolts).
mil-prf-19500/426d 9 table i. group a inspection . inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 1 2 / visual and mechanical inspection 3 / 2071 n = 45 devices, c = 0 solderability 3 / 4 / 2026 15 leads, c = 0 resistance to solvents 3 / 4 / 5 / 1022 15 devices, c = 0 temperature cycling 3 / 4 / 1051 test condition c, 25 cycles. n = 22 devices, c = 0 heremetic seal 4 / fine leak gross leak 1071 n = 22 devices, c = 0 electrical measurements 4 / group a, subgroup 2 bond strength 3 / 4 / 2037 precondition t a = +250 c at t = 24 hrs or t a = +300 c at t = 2 hrs. n = 11 wires, c = 0 subgroup 2 breakdown voltage, collector to emitter 3011 bias condition d; i c = 1.0 ma dc, i b = 0 v (br)ceo 30 v dc collector to base cutoff current 3036 bias condition d; v cb = 30 vdc i cb02 100 a dc emitter to base cutoff current 3061 bias condition d; v eb = 3 vdc i eb02 100 a dc collector to base cutoff current 3036 bias condition d; v cb = 20 v dc, i e = 0 i cb01 100 na dc forward-current transfer ratio* 3076 v ce = 10 v dc; i c = 0.5 ma dc; h fe1 15 forward-current transfer ratio* 3076 v ce = 10 v dc; i c = 2.0 ma dc; h fe2 20 forward-current transfer ratio* 3076 v ce = 10 v dc; i c = 5.0 ma dc; h fe3 30 165 see footnotes at end of table.
mil-prf-19500/426d 10 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limit unit method conditions min max subgroup 3 high temperature operation: t c = +150 c collector to base cutoff current 3036 bias condition d; v ce = 20 v dc, i e = 0 i cb02 100 a dc low temperature operation: t a = -55 c forward-current transfer ratio 3076 v ce = 10 v dc; i c = 5 ma dc; h fe4 10 subgroup 4 magnitude of common- emitter small-signal short- circuit forward-current transfer ratio 3306 v ce = 10 v dc; i e = 2.0 ma dc; f = 100 mhz; case lead grounded |h fe | 12 36 collector to base feedback capacitance 3236 v cb = 10 v dc; i e = 0; 100 khz f 1 mhz; case and emitter leads shall be guarded c cb 0.8 pf collector to base time constant (2n4957 only) 3236 v cb = 10 v dc; i e = 2.0 ma dc; f = 63.6 mhz; case and emitter leads shall be grounded (see 4.5.2 and figure 3) r b 'c c 1.0 8.0 ps collector to base time constant (2n4957ub only) 3236 v cb = 10 v dc; i e = 2.0 ma dc; f = 63.6 mhz; case and emitter leads shall be grounded (see 4.5.2 and figure 3) r b 'c c 1.0 16.0 ps noise figure 3246 v ce = 10 v dc; i c = 2.0 ma dc; f = 450 mhz; r l = 50 ? ; case lead shall be grounded (see figure 4) nf 3.5 db common-emitter small signal power gain 3256 v ce = 10 v dc; c = 2.0 ma dc; f = 450 mhz; case lead shall be grounded (see figure 4) g pe 17 25 db subgroups 5, 6, and 7 not applicable 1 / for sampling plan (unless otherwi se specified), see mil-prf-19500. 2 / for resubmission of failed subgroup a1, double the sample si ze of the failed test or sequence of tests. a failure in group a, subgroup 1 shall not require retest of the entire subgroup. only the failed test shall be rerun upon submission. 3 / separate samples may be used. 4 / not required for jans devices. 5 / not required for laser marked devices.
mil-prf-19500/426d 11 table ii. groups b and c electrical end-point inspection measurements . 1 / 2 / 3 / 4 / step inspection mil-std-750 symbol limits unit method conditions min max 1. collector to base cutoff current 3036 bias condition d; v cb = 20 v dc, i e = 0 i cb01 100 na dc 2. collector to base cutoff current 3036 bias condition d; v cb = 20 v dc, i e = 0 ? i cb01 100 percent of initial value or 10 na dc, whichever is greater. 3. forward current transfer ratio 3076 i c = 5 ma dc, v ce = 10 v dc h fe3 30 165 4. forward current transfer ratio 3076 i c = 5 ma dc, v ce = 10 v dc ? h fe3 30 20 percent change from initial reading. 1 / the electrical measurements for table vi a (jans) of mil-prf-19500 are as follows: a. subgroup 3, see table ii herein, steps 1 and 3. b. subgroup 4 and 5, see table ii herein, steps 1, 2, 3, and 4. 2 / the electrical measurements for group b of 4.4.2. 2 herein (jan, jantx, and jantxv) are as follows: a. steps 1, 2, and 3, of 4.4.2.2, see table ii herein, all steps. 3 / the electrical measurements for table v ii (jans) of mil-prf-19500 are as follows: a. subgroup 2, see table ii herein, steps 1 and 3. b. subgroups 6, see table ii herein, steps 1, 2, 3 and 4. 4 / the electrical measurements for group c, 4.4.3. 2 herein (jan, jantx, and jantxv) are as follows: a. step 2 of 4.4.3.2, see table ii herein, steps 1 and 3.
mil-prf-19500/426d 12 * table iii. group e inspection (all qua lity levels) - for qualification only . mil-std-750 inspection method conditions qualification subgroup 1 temperature cycling (air to air) hermetic seal fine leak gross leak electrical measurements subgroup 2 intermittent life electrical measurements subgroups 3, 4, 5, 6, and 7 not applicable 1051 1071 1037 test condition c, 500 cycles see group a, subgroup 2 and table ii herein. v cb = 10 v dc, 6000 cycles see group a, subgroup 2 and table ii herein. 45 devices c = 0 45 devices c = 0 subgroup 8 45 devices c = 0 reverse stability 1033 condition a for devices 400 v, condition b for devices < 400 v.
mil-prf-19500/426d 13 figure 3. rf amplifier for collector to base time constant tests .
mil-prf-19500/426d 14 values: c 1 , c 7 = 1-10 pf (variable air-piston type capacitors) c 2 , c 4 , c 6 = 500 pf (button type capacitors) c 3 , c 8 = .4 - 6.0 pf (variable air-piston type capacitors) c 5 = 1,000 pf r 1 = 2.7 k ? r 2 , r 4 = 1 k ? r 3 = 20 k ? l 1 = silver-plated brass bar, 1.0 inch long by 0.25 inch o.d. (straight bar) l 2 = silver-plated brass bar, 1.5 inches long by 0.25 inch o.d. tap is 0.25 inch from collector (straight bar). l 3 = 1/2 turn of awg number 16 wire, loop o.d. approximat ely 0.5 inch, located 0.25 inch from, and parallel to l 2 . l 4 = 0.22 h the noise source is a hot-cold body, (ail type 70 or equival ent) with a test receiver (ail type 70 or equivalent). figure 4. rf amplifier for power gain and noise figure tests .
mil-prf-19500/426d 15 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control point's packaging ac tivity within the military department or defense agency, or within the military department's system command. packaging data retrieval is available from the managing military department's or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitati on, and if required, the specific issue of individual documents referenced (see 2.2). c. packaging requirements (see 5.1). d. lead finish (see 3.4.1). 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: ds cc-vqe, p.o. box 3990, columbus, oh 43216-5000. * 6.4 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2576) dla - cc review activities: army - ar, mi navy - sh air force - 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/426d 2. document date 28 december 2001 3. document title semiconductor device, transistor, pnp, silicon, amplifier type 2n4957 and 2n4957ub jan, jantx, jantxv, and jans 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center, columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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